dat a sheet product specification april 1991 discrete semiconductors bf996s n-channel dual-gate mos-fet
april 1991 2 nxp semiconductors product specification n-channel dual-gate mos-fet bf996s features ? protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. applications ? rf applications such as: ? uhf television tuners ? professional communication equipment. pinning pin symbol description 1 s, b source 2 d drain 3g 2 gate 2 4g 1 gate 1 fig.1 simplified outline (sot143) and symbol. marking code: mhp. handbook, halfpage s,b d g 1 g 2 43 21 top view mam039 description depletion type field-effect transistor in a plastic sot143 microminiature package with interconnected source and substrate. quick reference data symbol parameter conditions typ. max. unit v ds drain-source voltage ? 20 v i d drain current ? 30 ma p tot total power dissipation up to t amb =60 ? c ? 200 mw t j junction temperature ? 150 ? c transfer admittance f = 1 khz; i d =10ma; v ds =15v; v g2 ? s =4v 18 ? ms c ig-1s input capacitance at gate 1 f = 1 mhz; i d =10ma; v ds =15v; v g2 ? s =4v 2.3 2.6 pf c rs feedback capacitance f = 1 mhz; i d =10ma; v ds =15v; v g2 ? s =4v 25 ? ff f noise figure f = 200 mhz g s =2ms; b s =b sopt ; i d =10ma; v ds =15v; v gs ? 2 =4v 1 ? db y fs
april 1991 3 nxp semico nductors product specification n-channel dual-gate mos-fet bf996s limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v ds drain-source voltage ? 20 v i d drain current (dc) ? 30 ma i d(av) average drain current ? 30 ma i g1-s gate 1 source ?? 10 ma i g1-s gate 2 source ?? 10 ma p tot total power dissipation up to t amb =60 ? c; note 1 ? 200 mw t stg storage temperature range ? 65 +150 ? c t j junction temperature ? 150 ? c fig.2 power derating curve. handbook, halfpage 0 200 0 100 200 mge792 100 t amb (c) p tot (mw) thermal characteristics note to the limiting values and the thermal characteristics 1. device mounted on a ceramic substrate of 8 ? 10 ? 0.7 mm. symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient in free air; note 1 460 k/w
april 1991 4 nxp semico nductors product specification n-channel dual-gate mos-fet bf996s static characteristics t j =25 ? c unless otherwise specified. dynamic characteristics measuring conditions (common source): i d =10ma; v ds =15v; v g2-s =4v; t amb =25 ? c. symbol parameter conditions min. max. unit i g1 ? ss gate cut-off current v g1-s = ? 5v; v g2-s =v ds =0 ?? 50 na i g2 ? ss gate cut-off current v g2-s = ? 5v; v g1-s =v ds =0 ?? 50 na v (br)g1-ss gate-source breakdown voltage i g1-s = ? 10 ma; v g2-s =v ds =0 ? 6 ? 20 v v (br)g2-ss gate-source breakdown voltage i g2-s = ? 10 ma; v g1-s =v ds =0 ? 6 ? 20 v i dss drain current v ds =15v; v g1-s =0; v g2-s =4v 4 20 ma v (p)g1-s gate-source cut-off current i d =20 ? a; v ds =15v; v g2-s =4v ?? 2.5 v v (p)g2-s gate-source cut-off current i d =20 ? a; v ds =15v; v g1-s =0 ?? 2v symbol parameter conditions min. typ. max. unit transfer admittance f = 1 khz 15 18 ? ms c ig1-s input capacitance at gate 1 f = 1 mhz ? 2.3 2.6 pf c ig2-s input capacitance at gate 2 f = 1 mhz ? 1.2 ? pf c rs feedback capacitance f = 1 mhz ? 25 ? ff c os output capacitance f = 1 mhz ? 0.8 ? pf f noise figure f = 200 mhz; g s =2ms; b s =b sopt ? 1 ? db f=800mhz; g s = 3.3 ms; b s =b sopt ? 1.8 ? db g p power gain f = 200 mhz; g s =2ms; b s =b sopt ; g l = 0.5 ms; b l =b lopt ? 25 ? db f=800mhz; g s = 3.3 ms; b s =b sopt ; g l =1ms; b l =b lopt ? 18 ? db y fs
april 1991 5 nxp semico nductors product specification n-channel dual-gate mos-fet bf996s package outline unit a references outline version european projection issue date iec jedec jeita mm 1.1 0.9 a 1 max 0.1 b 1 0.88 0.78 c 0.15 0.09 d 3.0 2.8 e 1.4 1.2 h e ywvq 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 e 1 1.7 l p 0.1 0.1 0.2 b p 0.48 0.38 dimensions (mm are the original dimensions) sot143b 04-11-16 06-03-16 0 1 2 mm scale plastic surface-mounted package; 4 leads sot143b d h e e a b v m a x a a 1 l p q detail x c y w m e 1 e b 2 1 3 4 b 1 b p
april 1991 6 nxp semico nductors product specification n-channel dual-gate mos-fet bf996s data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. definitions product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer, unless nxp semiconductors and customer have explicitly agreed otherwise in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semico nductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without lim itation - lost profits, lost savings, business interrup tion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semi conductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assi stance with ap plications or customer product design. it is customer?s sole responsibility to dete rmine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as for the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
april 1991 7 nxp semico nductors product specification n-channel dual-gate mos-fet bf996s nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applications and products using nxp semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will c ause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeat ed exposure to lim iting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the general terms and conditions of comme rcial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconductors products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semicond uctors? warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors? standard warranty and nxp semiconductors? product specifications.
nxp semiconductors provides high performance mixed signal and standard product solutions that leverage its leading rf, analog, power management, interface, security and digital processing expertise contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2010 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors, including new legal definitions and disclaimers. no changes were made to the technical content, except for package outline drawings which were updated to the latest version. printed in the netherlands r77/02/pp 8 date of release: april 1991
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